TP0104

These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these TP0104 devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

The features of TP0104 are Low threshold - 2.4v max, high input impedance, low input capacitance, fast switch speeds, low on resistance, free from secondary breakdown, low input and output leakage complementary N- and P-channel devices. The applications of TP0104 are logic level interfaces - ideal for TTL and CMOS, solid state relays, battery operated systems, photo voltaic drives, analog switches, general purpose line drivers, telecom switches.

The absolute maximum ratings of  TP0104 are drain-to-source voltage BVDSS, drain-to-gate voltage BVDGS, gate-to-Source voltage ±20V, operating and storage temperature -55 to +150, soldering temperature(for TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds)300.