MOSFET 20V 0.6A 0.35W
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V |
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 0.6 A |
Resistance Drain-Source RDS (on) : | 650 mOhms at 4.5 V | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | TO-236-3 |
Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
12 ±8 |
V | |
Continuous Drain Current (TJ = 150)b | TA= 25 TA= 70 |
ID |
0.5 0.39 |
A |
Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b |
IDM IS |
3 0.5 | ||
Power Dissipationb | TA= 25 TA= 70 |
PD |
0.23 0.15 |
W |
Operating Junction and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|