TN3512L

TN3512L is a kind of N-Channel enhancement-mode MOS transistor.

What comes next is about the absolute maximum ratings of TN3512L (TA=25 unless otherwise noted). The VDS (drain-source voltage) is 350 V. The VGS (gate-source voltage) is ±20 V. The ID (continuous drain current) is ±0.16 A at TA=25 and ±0.10 A at TA=100. The IDM (pulsed drain current) is ±0.65 A. The PD (power dissipation) is 0.80 W at TA=25 and 0.32 W at TA=100. The TJ, Tstg (operating junction and storage temperature range) is from -55 to +150. The TL (lead temperature (1/16" from case for 10 sec)) is 300. The RthJA (junction to ambient) is 156 K/W.

The following is about the static characteristics of TN3512L. The typical V(BR)DSS (drain-source breakdown voltage) is 420 V and the minimum is 400 V at VGS=0 V, ID=10 A. The minimum VGS(th) (gate threshold voltage) is 0.6 V, the typical is 1.3 V and the maximum is 1.8 V at VDS=VGS, ID=1 mA. The typical IGSS (gate-body leakage) is ±1 nA and the maximum is ±10 nA at VDS=0 V, VGS=±20 V. The minimum ID(ON) (on-state drain current) is 150 mA and the maximum is 300 mA at VDS=10 V, VGS=4.5 V. The minimum gFS (forward transconductance) is 125 mS and the typical is 350 mS at VDS=15 V, ID=100 mA.