TN2540N3-G

MOSFET 400V 12Ohm

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TN2540N3-G Picture
SeekIC No. : 00150460 Detail

TN2540N3-G: MOSFET 400V 12Ohm

floor Price/Ceiling Price

US $ .42~.57 / Piece | Get Latest Price
Part Number:
TN2540N3-G
Mfg:
Supertex
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~100
  • 100~500
  • 500~1000
  • Unit Price
  • $.57
  • $.48
  • $.44
  • $.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 175 mA
Resistance Drain-Source RDS (on) : 12 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 400 V
Package / Case : TO-92
Resistance Drain-Source RDS (on) : 12 Ohms
Continuous Drain Current : 175 mA


Features:

`Low threshold - 2.0V max
`High input impedance
`Low input capacitance - 125pF max
`Fast switching speeds
`Low ON-resistance
`Free from secondary breakdown
`Low input and output leakage
`Complementary N and P-channel devices



Application

`Logic level interfaces - ideal for TTL and CMOS
`Solid state relays
`Battery operated systems
`Photo voltaic devices
`Analog switches
`General purpose line drivers
`Telecom switches



Pinout

  Connection Diagram


Specifications

Parameter
Value
Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

temperature

Soldering temperature*
BVDSS

BVDGS

±20V

-55°C to

+150°C

300°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.




Description

The Supertex TN2540N3-G is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this TN2540N3-G is free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs TN2540N3-G are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.




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