MOSFET 400V 12Ohm
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DescriptionThe TN25/15/10-3F3 is designed as one kind of ferrite toroid device that is coated with...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 400 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 175 mA | ||
Resistance Drain-Source RDS (on) : | 12 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
Parameter |
Value |
Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Soldering temperature* |
BVDSS BVDGS ±20V -55°C to +150°C 300°C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
The Supertex TN2540N3-G is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this TN2540N3-G is free from thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs TN2540N3-G are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.