MOSFET NCh ENHANCEMENT MODE VERTICAL DMOS
TN2529K6-G: MOSFET NCh ENHANCEMENT MODE VERTICAL DMOS
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DescriptionThe TN25/15/10-3F3 is designed as one kind of ferrite toroid device that is coated with...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 290 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.41 A | ||
Resistance Drain-Source RDS (on) : | 6 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | QFN EP | Packaging : | Tray |