TN2529

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs of the TN2529 are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching speeds are desired.