DescriptionThe TN2469TK is a photo transistor.Features of the TN2469TK are:(1)High clamping voltage structure (1200 - 1500V); (2)Low gate triggering current for direct drive from line (< 1.5mA); (3)High holding current (> 175mA), ensuring high striking energy. The absolute maximum ratings o...
TN2469TK: DescriptionThe TN2469TK is a photo transistor.Features of the TN2469TK are:(1)High clamping voltage structure (1200 - 1500V); (2)Low gate triggering current for direct drive from line (< 1.5mA); ...
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The TN2469TK is a photo transistor.Features of the TN2469TK are:(1)High clamping voltage structure (1200 - 1500V); (2)Low gate triggering current for direct drive from line (< 1.5mA); (3)High holding current (> 175mA), ensuring high striking energy.
The absolute maximum ratings of the TN2469TK can be summarized as:(1)Power dissipation :100 mW; (2)Collector-emitter voltage:30 V; (3)Emitter-collector voltage :5V; (4)Operating temperature range: -20 ~+80 ; (5)Storage temperature range:-20 ~+80 .
The electrical characteristics(Ta=25) of the TN2469TK can be summarized as:(1)Collector-emitter breakdown voltage:30V; (2)Emitter-collector breakdown voltage:5V; (3)Collector-emitter saturation voltage:0.3V; (4)Rise time :15S; (5)Fall time:15S; (6)Collector dark current:100nA; (7)On state collector current:0.20mA.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .