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TN2460T

MOSFET 240V 0.051A

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SeekIC No. : 00166714 Detail

TN2460T: MOSFET 240V 0.051A

TN2460T Data Sheet

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Part Number:
TN2460T
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 240 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 60000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 75 A
Drain-Source Breakdown Voltage : 240 V
Package / Case : TO-236-3
Resistance Drain-Source RDS (on) : 60000 mOhms


Features:

`Low On-Resistance: 40
`Secondary Breakdown Free: 260 V
`Low Power/Voltage Driven
`Low Input and Output Leakage
`Excellent Thermal Stability


Application

· High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.
· Telephone Mute Switches, Ringer Circuits
· Power Supply, Converters
· Motor Control


Specifications

Parameter
Symbol
TN2460L
TN2460T
Unit
Drain-Source Voltage
VDS
240
240
V
Gate-Source Voltage
VGS
±20
±20
A
Continuous Drain Current ID

(TJ = 150)
TA= 25
ID
75
51
TA= 100
48
32
Pulsed Drain Currenta
IDM
800
400
W
Power Dissipation
TA= 25
PD
0.8
0.36
TA= 100
0.32
0.14
Thermal Resistance, Junction-to-Ambient
R thJA
156
350
/W
Operating Junction and Storage Temperature Range
T J, Tstg
−55 to 150
Notes
a. Pulse width limited by maximum junction temperature. For applications information see AN80


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