TN2425TG

Continuous Drain Current :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Configuration : Dual Dual Drain
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 3500 mOhms


Features:

`Dual N-channel device
`Low threshold 2.0V max.
`High input impedance
`Low input capacitance 200pF
`Fast switching speeds
`Low caps ON resistance
`Free from secondary breakdown
`Low input and output leakage



Application

`Logic level interfaces ideal for TTL and CMOS
`Solid state relays
`Medical ultrasound pulsers
`Analog switches
`General purpose line drivers
`Telecom switches


Pinout




Specifications

Parameter	Value
Drain to source voltage	BVDSS
Drain to gate voltage	BVDGS
Gate to source voltage	±20V
Thermal resistance, Junction to drain lead	50/W
Operating and storage temperature	-55 to +150
Soldering temperature1	+300

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

Note 1. Distance of 1.6mm from case for 10 seconds.

Description

The Supertex TN2425TG is a dual low threshold enhancement mode (normally off) transistor utilizing a vertical DMOS structure and Supertex's well proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, with the high input impedance and positive temperature coeffi cient inherent in MOS devices.

Characteristic of all MOS structures, this TN2425TG is free from thermal runaway and thermally-induced secondary breakdown.

Supertex's vertical DMOS FETs of the TN2425TG are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.