Features: `Low On-Resistance: 9.5 `Secondary Breakdown Free: 220 V` Low Power/Voltage Driven` Low Input and Output Leakage` Excellent Thermal StabilityApplication· High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.· Telephone Mute Switches, Ringer Circuits· Power ...
TN2010T: Features: `Low On-Resistance: 9.5 `Secondary Breakdown Free: 220 V` Low Power/Voltage Driven` Low Input and Output Leakage` Excellent Thermal StabilityApplication· High-Voltage Drivers: Relays, Sole...
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SpecificationsDescriptionThe TN20/10/7-3C90 is designed as one kind of iron ferrite toroid device ...
SpecificationsDescriptionThe TN20/13/6-2P80 is designed as one kind of iron ferrite toroid device ...
SpecificationsDescriptionThe TN20/6.4-3C20-A81 is designed as one kind of gapped ferrite toroid de...
Parameter |
Symbol |
Limit |
Unit | |
Drain-Source Voltage |
VDS |
200 |
V | |
Gate-Source Voltage |
VGS |
±20 |
A | |
Continuous Drain Current |
TA= 25 |
ID |
0.12 | |
TA= 100 |
0.08 | |||
Pulsed Drain Currenta a |
IDM |
0.34 |
W | |
Power Dissipation |
TA= 25 |
PD |
0.35 | |
TA= 100 |
0.22 | |||
Maximum Junction-to-Ambient |
RthJA |
357 |
/W | |
Operating Junction and Storage Temperature Range |
T J, Tstg |
−55 to 150 |
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please equest FaxBack document #70203.