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TN0401L

MOSFET 40V 0.64A 0.8W

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SeekIC No. : 00165541 Detail

TN0401L: MOSFET 40V 0.64A 0.8W

TN0401L Data Sheet

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Part Number:
TN0401L
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.64 A
Resistance Drain-Source RDS (on) : 1200 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-226AA-3    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 0.64 A
Resistance Drain-Source RDS (on) : 1200 mOhms
Package / Case : TO-226AA-3


Features:

Low On-Resistance: 0.85
 Low Threshold: 1.4V
 Low Input Capacitance: 38 pF
 Fast Switching Speed: 9 ns
 Low Input and Output Leakage


Application

Direct Logic-Level Interface: TTL/CMOS
 Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.
 Battery Operated Systems
 Solid-State Relays


Specifications

Parameter Symbol TN0201L TN0401L VN0300L VN0300LS Unit
Drain-Source Voltage VDS 20 20 30 30 V
Gate-Source Voltage VGS 20 20 30 30
Continuous Drain Current(TJ = 150) TA = 25 ID 0.64 0.64 0.64 0.67 A
See Note 0.38 0.38 0.38 0.43
Pulsed Drain Current IDM 1.5 1.5 3 3
Power Dissipation TA = 25 PD 0.8 0.8 0.8 0.9 W
TA = 70 0.32 0.32 0.32 0.4
Thermal Resistance, Junction-to-Ambient RthJA 156 156 156 156
Operating Junction and Storage Temperature Range TJ, Tstg -55to150 /W



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