DescriptionThe TMD1415-2B is a microwave power MMIC amplifier. The feature ofthe device are as follows: (1)high power P1dB = 34.0dBm; (2)high power added effciency, add = 25%; (3)high gain G1dB = 25dB; (4)broadband operation, f=14.1-15.4GHz. The absolute maximum ratings of the TMD1415-2B are: (1)...
TMD1415-2B: DescriptionThe TMD1415-2B is a microwave power MMIC amplifier. The feature ofthe device are as follows: (1)high power P1dB = 34.0dBm; (2)high power added effciency, add = 25%; (3)high gain G1dB = 25...
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Features: · HIGH POWERP1dB=33.0dBm at 9.5GHz to 12.0GHz· HIGH GAING1dB=25.0dB at 9.5GHz to 12.0GHz...
Features: ` Suitable for Ku-band VSAT` High Power P1dB=31.5dBm(TYP.)` High Power Added Efficiency ...
The TMD1415-2B is a microwave power MMIC amplifier. The feature of the device are as follows: (1)high power P1dB = 34.0dBm; (2)high power added effciency, add = 25%; (3)high gain G1dB = 25dB; (4)broadband operation, f=14.1-15.4GHz.
The absolute maximum ratings of the TMD1415-2B are: (1)drain supply voltage: 10V; (2)gate supply voltage: -10V; (3)input power: 10dBm; (4)flange temperature: -30~+80; (5)storage temperature: -65~+175.
The following is about the electrical characteristics of TMD1415-2B : (1)operating frequency: 14.4GHz min and 15.4GHz max; (2)output power at 1dB gain compression point: 32.0dBm min and 34.0dBm typical at VDD = 7V, VGG = -5V; (3)power gain at 1dB gain compression point: 21.0dB min and 25.0dB typical at VDD = 7V, VGG = -5V; (4)gain flatness: ±1.25 max dB at VDD = 7V, VGG = -5V; (5)drain current: 1.4A typical and 1.8A max at VDD = 7V, VGG = -5V; (6)power added efficiency: 25% typical at VDD = 7V, VGG = -5V; (7)third order intercept point: 40dBm at VDD = 7V, VGG = -5V; (8)decteor output voltage: 3.0V typical at @Po = 33dBm.