Features: High speed operation: 93LC46/56/57/66 : 1MHz 93LC86 : 3MHz Low power CMOS technology 1.8 to 6.0 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-clear Hardware and software write protection Power-up inadvertant write protection 1,000,000 Program/...
TMC93LC46: Features: High speed operation: 93LC46/56/57/66 : 1MHz 93LC86 : 3MHz Low power CMOS technology 1.8 to 6.0 volt operation Selectable x8 or x16 memory organization Self-timed write cycle with auto-c...
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High speed operation:
93LC46/56/57/66 : 1MHz
93LC86 : 3MHz
Low power CMOS technology
1.8 to 6.0 volt operation
Selectable x8 or x16 memory organization
Self-timed write cycle with auto-clear
Hardware and software write protection
Power-up inadvertant write protection
1,000,000 Program/erase cycles
100 year data retention
Commercial, industrial and automotive
temperature ranges
Sequential read (except TMC93LC46)
Program enable (PE) pin (TMC93LC86 only)
The TMC93LC46 are 1K/2K/2K/4K/16K - bit Serial EEPROM memory devices which are configured as either registers of 16 bits (ORG pin at VCC) or 8 bits (ORG pin at GND).Each register can be written (or read)serially by using the DI (or DO) pin. The 93LC46/56/ 57/66/86 are manufactured using TMC's dvanced CMOS EEPROM floating gate technology. The devices are designed to endure 1,000,000 program/erase cycles and have a data retention of 100 years. The devices are available in 8-pin DIP, 8-pin SOIC or 8-pin TSSOP packages.