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TMBYV10-60

Specifications Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 60 V IF Forward Continuous Current Ti = 25 °C 1 A IFRM Repetitive Peak Forward Current Ti = 25 °Ctp = 10ms 20Sinusoidal Pulse A IFSM Surge non Repetitive Forwar...

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TMBYV10-60: Specifications Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 60 V IF Forward Continuous Current Ti = 25 °C 1 A IFRM Repetitive Peak Fo...

TMBYV10-60 Data Sheet

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Part Number:
TMBYV10-60
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/1

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Product Details

Description



Specifications

Symbol Parameter Value Unit
VRRM Repetitive Peak Reverse Voltage 60 V
IF Forward Continuous Current Ti = 25 °C 1 A
IFRM Repetitive Peak Forward Current Ti = 25 °C
tp = 10ms		 20
Sinusoidal Pulse		 A
IFSM Surge non Repetitive Forward Current Ti = 25 °C
tp = 300µs		 40
Rectangular Pulse		 A
Tstg Tj Storage and Junction Temperature Range - 65 to + 150
- 65 to + 125

°C

°C

TL Maximum Temperature for Soldering during 15s 260 °C



Description

Metal to silicon rectifier diode of the TMBYV10-60 in glass case featu-ring very low forward voltage drop and fast recovery time, intended for low voltage switching modepower upply,polarity protection and high fre-quency circuits.


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