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TM90EZ-2H

Specifications Symbol Parameter Voltage class Unit 24 2H VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage 1350 1700 V VR (DC) DC reverse voltage 960 1280 V VDRM Repetitive pe...

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TM90EZ-2H: Specifications Symbol Parameter Voltage class Unit 24 2H VRRM Repetitive peak reverse voltage 1200 1600 V VRSM Non-repetitive peak reverse voltage ...

TM90EZ-2H Data Sheet

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Part Number:
TM90EZ-2H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Symbol
Parameter
Voltage class
Unit
24
2H
VRRM
Repetitive peak reverse voltage
1200
1600
V
VRSM
Non-repetitive peak reverse voltage
1350
1700
V
VR (DC)
DC reverse voltage
960
1280
V
VDRM
Repetitive peak off-state voltage
1200
1600
V
VDSM
Non-repetitive peak off-state voltage
1350
1700
V
VD (DC)
DC off-state voltage
960
1280
V
Symbol
Parameter
Conditions
Ratings
Unit
IT (RMS), IF (RMS)
RMS on-state current
140
A
IT (AV),IF (AV)
Average on-state current
Single-phase,half-wave 180°conduction,TC=82°C
90
A
ITSM,IFSM
Surge (non-repetitive)on-state current
One half cycle at 60Hz, peak value
1800
A
I2t
I2t for fusing
Value for one cycle of surge current
1.4 * 104
A2S
di/dt
Critical rate of rise of on-state current
VD=1/2VDRM, IG=1.0A, Tj=125°C
100
A/s
PGM
Peak gate power dissipation
5.0
W
PG (AV)
Average gate power dissipation
0.5
W
VFGM
Peak gate forward voltage
10
V
VRGM
Peak gate reverse voltage
5.0
V
IFGM
Peak gate forward current
2.0
A
Tj
Junction temperature
40~125
°C
Tstg
Storage temperature
40~125
°C
Viso
Isolation voltage
Charged part to case
2500
V
-
Mounting torque
Main terminal screw M5
1.47~1.96
N`m
15~20
kg`cm
Mounting screw M6
1.96~2.94
N`m
20~30
kg`cm
-
Weight
Typical value
160
g
Item
VRRM
VRSM
VR(DC)
VDRM
VDSM
V(DC)
IT (RMS)
IT(AV)
ITSM
I2t
di/dt
IF (RMS)
IF(AV)
IFSM
Thyristor
Diode
-
-
-
-
Item PGM PG(AV) VFGM IFGM Tj Tstg
Thyristor
Diode

-

-

-

-





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