TM4EP72BJB

` Organization . . . 4194304 * 72 Bits
` Single 3.3-V Power Supply (±10% Tolerance)
` JEDEC 168-Pin Dual-In-Line Memory Module (DIMM) With Buffer for Use With Socket
` TM4EP72xxB-xx - Uses Eighteen 16M-Bit High-Speed (4M*4-Bit) Dynamic Random Access Memories (DRAMs)
` High-Speed, Low-Noise LVTTL Interface
` High-Reliability Plastic 26-Lead 300-Mil-Wide Surface-Mount Small-Outline J-Lead (SOJ) Package (DJ Suffix) and 26-Lead 300-Mil-Wide Surface-Mount Thin Small-Outline Package (TSOP) (DGA Suffix)
` Intended for Workstation/Server Applications
` Long Refresh Periods: TM4EP72CxB: 64 ms (4096 Cycles) TM4EP72BxB: 32 ms (2048 Cycles)
` 3-State Output
` Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and Hidden Refresh
` Ambient Temperature Range 0°C to 70°C
` Gold-Plated Contacts
` Performance Ranges ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE tRAC tCAC tAA tHPC (MAX) (MAX) (MAX) (MIN) '4EP72xxB-50 50 ns 13 ns 25 ns 20 ns '4EP72xxB-60 60 ns 15 ns 30 ns 25 ns '4EP72xxB-70 70 ns 18 ns 35 ns 30 ns

Supply voltage range, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Voltage range on any pin (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 V to 4.6 V
Short-circuit output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Power dissipation: TM4EP72xxB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 W
Ambient temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55°C to 125°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and  functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

The TM4EP72BJB is a 32M-byte, 168-pin, buffered, dual-in-line memory module (DIMM). The DIMM is composed of eighteen TMS427409A, 4194304 * 4-bit 2K refresh EDO DRAMs, each in a 300-mil, 26-lead plastic TSOP (DGA suffix) or SOJ package (DJ suffix), and two SN74LVT162244 16-bit buffers, each in a 48-lead plastic TSOP mounted on a substrate with decoupling capacitors. See the TM4EP72BJB data sheet (literature number SMKS893).

The TM4EP72BJB is a 32M-byte, 168-pin, buffered DIMM. The DIMM is composed of eighteen TMS426409A, 4194304 * 4-bit 4K refresh EDO DRAMs, each in a 300-mil, 26-lead plastic TSOP (DGA suffix) or SOJ package (DJ suffix), and two 16-bit buffers mounted on a substrate with decoupling capacitors. See the TMS427409A data sheet (literature number TM4EP72BJB ).

The TM4EP72BJB are intended for multimodule workstation/server applications where buffering is needed for address and control signals. Two copies of address 0 (A0 and B0) are defined to allow maximum performance for 4-byte applications which interleave between two 4-byte banks. A0 is common to the DRAMs used for DQ0DQ31, while B0 is common to the DRAMs used for DQ32DQ63.