TM248NBK36R

The TM248NBK36R is a dynamic random-access memory (DRAM) organized as four times 1048576 × 9 (bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The SIMM is composed of eight TMS44400DJ, 1 048 576 × 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead packages (SOJs), and one TMS44460DJ, 1 048 576 × 4-bit Quad-CAS DRAM in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 or TMS44460 data sheet, respectively. The TM124MBK36B is available in the single-sided BK leadless module for use with sockets. The TM124MBK36B features RAS access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation from 0°C to 70°C.

The TM248NBK36R is a DRAM organized as four times 2 097 152 × 9 (bit 9 is generally used for parity) in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS44400DJ, 1 048 576 × 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead packages (SOJs), and two TMS44460DJ, 1 048 576 × 4-bit Quad-CAS DRAMs, each in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 and TMS44460 data sheet, respectively.