Features: Organization TM124MBJ36F . . . 1 048 576 * 36 TM248NBJ36F . . . 2 097 152 * 36Single 5-V Power Supply (±10% Tolerance)72-Pin Single In-Line Memory Module (SIMM) for Use With SocketTM124MBJ36F Utilizes Two 16-Megabit and One 4-Megabit Dynamic Random-Access Memories (DRAMs) in Plastic Sma...
TM124MBJ36F: Features: Organization TM124MBJ36F . . . 1 048 576 * 36 TM248NBJ36F . . . 2 097 152 * 36Single 5-V Power Supply (±10% Tolerance)72-Pin Single In-Line Memory Module (SIMM) for Use With SocketTM124MBJ...
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Features: • P-1 dB: 32 dBm• Small Signal Gain: 6 dB• IP3: 41 dBm• Bias Con...
Features: • P-1 dB: 29 dBm• Small Signal Gain: 7 dB• IP3: 38 dBm• Bias Con...
TM124MBJ36F
The TM124MBJ36F is a 4-MByte DRAM organized as four times 1048576 × 9 in a 72-pin SIMM. The SIMM is composed of two TMS418160DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package, and one TMS44460DJ 1048576 × 4-bit DRAM in a 24/26-lead plastic SOJ package mounted on a substrate with
decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the TMS418160 and TMS44460 data sheets, respectively. The TM124MBJ36F SIMM is available in the single-sided BJ leadless module for use with sockets.
TM248NBJ36F
The TM248NBJ36F is an 8-MByte DRAM organized as four times 2097152 × 9 in a 72-pin SIMM. The SIMM is composed of four TMS418160DZ 1 048 576 × 16-bit DRAMs, each in a 42-lead plastic SOJ package, and two TMS44460DJ 1048576 × 4-bit DRAMs, each in a 24/26-lead plastic SOJ package mounted on a substrate with decoupling capacitors. The TMS418160DZ and TMS44460DJ are described in the TMS418160 and TMS44460 data sheets, respectively. The TM248NBJ36F SIMM is available in the double-sided BJ leadless module for use with sockets.