TLP830

The TLP830 is designed as a photointerrupter which uses a high radiant power GaAs LED and a fast-response silicon phototransistor. The device is high resolution with a narrow slit pitch.

TLP830 has nine features. (1)Small package would be 7.4mm H and 4.5mm D. (2)Printed wiring board cirect mounting type (with a locating pin). (3)Roard thickness which would be 1mm or less. (4)Short lead type enabling automated mounting. (5)Gap 2mm. (6)High resolution which would be slit width 0.15mm. (7)High current transfer ratio which would be 3% min. (8)Material of the package which would be polybutylene terephalate. (9)Detector side is of visible light cut type. Those are all the main features.

Some absolute maximum ratings of TLP830 have been concluded into several points as follow. (1)Its forward current would be 50mA. (2)Its forward current derating would be -0.33mA/°C. (3)Reverse voltage would be 5V. (4)Its collector to emitter voltage would be 35V. (5)Its emitter to collector voltage would be 5V. (6)Its collector power dissipation would be 75mW. (7)Its collector power dissipation derating would be -1mA/°C. (8)Its collector current would be 50mA. (9)Its operating temperature range would be from -30°C to 85°C. (10)Its storage temperature range would be from -40°C to 100°C. (11)Its soldering temperature would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TLP830 are concluded as follow. (1)Its forward voltage would be min 1V and typ 1.15V and max 1.3V. (2)Its reverse current would be max 10uA. (3)Its peak emission wavelength would be typ 940nm. (4)Its dark current would be max 0.1uA. (5)Its peak sensitivity wavelength would be typ 870nm. (6)Its current transfer ratio would be min 3% and typ 20%. (7)Its collector to emitter saturation voltage would be typ 0.1V and max 0.35V. (8)Its switching time would be typ 15us for rise time and would be typ 15us for fall time.

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