DescriptionThe TLP828 is designed as a photointerrupter incorporating GaAs infrared LED and fast-response silicon phototransistor in a dust-proof package.TLP828 has eight features. (1)Small package would be 1.6mm thickness of PCB. (2)The package is only dust-proof for the sensor because thare are ...
TLP828: DescriptionThe TLP828 is designed as a photointerrupter incorporating GaAs infrared LED and fast-response silicon phototransistor in a dust-proof package.TLP828 has eight features. (1)Small package ...
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The TLP828 is designed as a photointerrupter incorporating GaAs infrared LED and fast-response silicon phototransistor in a dust-proof package.
TLP828 has eight features. (1)Small package would be 1.6mm thickness of PCB. (2)The package is only dust-proof for the sensor because thare are no slits. (3)High current transfer ratio would be 7.5% min. (4)Gap 5mm. (5)Resolution 1.5mm. (6)Material of the package is polycarbonate. (7)Detector side is of visible light cut type. (8)Fast response speed which would be 15us typ. Those are all the main features.
Some absolute maximum ratings of TLP828 have been concluded into several points as follow. (1)Its forward current would be 50mA. (2)Its forward current derating would be -0.33mA/°C. (3)Reverse voltage would be 5V. (4)Its collector to emitter voltage would be 35V. (5)Its emitter to collector voltage would be 5V. (6)Its collector power dissipation would be 75mW. (7)Its collector power dissipation derating would be -1mA/°C. (8)Its collector current would be 50mA. (9)Its operating temperature range would be from -25°C to 85°C. (10)Its storage temperature range would be from -40°C to 100°C. (11)Its soldering temperature would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of TLP828 are concluded as follow. (1)Its forward voltage would be min 1V and typ 1.15V and max 1.3V. (2)Its reverse current would be max 10uA. (3)Its peak emission wavelength would be typ 940nm. (4)Its dark current would be max 0.1uA. (5)Its peak sensitivity wavelength would be typ 870nm. (6)Its current transfer ratio would be min 7.5%. (7)Its collector to emitter saturation voltage would be typ 0.15V and max 0.35V. (8)Its rise and fall time would be typ 15us and max 50us.
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