DescriptionThe TLP824 is designed as a photointerrupter with a high rediant GaAs infrared LED and a silicon phototransistor combined.TLP824 has seven features. (1)Small package. (2)PWB directmounting type. (3)Gap 3mm. (4)Resolution slit width 0.5mm. (5)High current transfer ratio which would be mi...
TLP824: DescriptionThe TLP824 is designed as a photointerrupter with a high rediant GaAs infrared LED and a silicon phototransistor combined.TLP824 has seven features. (1)Small package. (2)PWB directmountin...
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The TLP824 is designed as a photointerrupter with a high rediant GaAs infrared LED and a silicon phototransistor combined.
TLP824 has seven features. (1)Small package. (2)PWB direct mounting type. (3)Gap 3mm. (4)Resolution slit width 0.5mm. (5)High current transfer ratio which would be min 6% at If=10mA. (6)The detector side is of visible light cut type. (7)Material of the package is polycarbonate. Those are all the main features.
Some absolute maximum ratings of TLP824 have been concluded into several points as follow. (1)Its forward current would be 50mA. (2)Its forward current derating would be -0.33mA/°C. (3)Reverse voltage would be 5V. (4)Its collector to emitter voltage would be 35V. (5)Its emitter to collector voltage would be 5V. (6)Its collector power dissipation would be 75mW. (7)Its collector power dissipation derating would be -1mA/°C. (8)Its collector current would be 50mA. (9)Its operating temperature range would be from -25°C to 85°C. (10)Its storage temperature range would be from -40°C to 100°C. (11)Its soldering temperature would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of TLP824 are concluded as follow. (1)Its forward voltage would be min 1V and typ 1.15V and max 1.3V. (2)Its reverse current would be max 10uA. (3)Its peak emission wavelength would be typ 940nm. (4)Its dark current would be max 0.1uA. (5)Its peak sensitivity wavelength would be typ 870nm. (6)Its current transfer ratio would be min 6% and max 90%. (7)Its collector to emitter saturation voltage would be typ 0.1V and max 0.4V. (8)Its rise and fall time would be typ 15us and max 50us.
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