TLP651

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70.
(Note 2) 50% duty cycle,1ms pulse width. Derate 1.6mA / above 70.
(Note 3) Pulse width 1s, 300pps.
(Note 4) Derate 0.9mW / above 70.
(Note 5) Derate 2mW / above 70.
(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.

The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8−lead DIP.

TLP651 has internal base connection. This base pin should be used for analog application or enable operation. If base pin is open, output signal will be noisy by environmental condition. For this case, TLP650 is suitable.
• Isolation voltage: 5000Vrms (min.)
• Switching speed: t_pHL = 0.3s (typ.)  t_pLH = 0.5s (typ.) (R_L = 1.9k)
• TTL compatible
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002
Certificate no. 7613
BS EN60950-1: 2002
Certificate no. 7614