DescriptionThe TLP633 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Features of the TLP633 are:(1)collector-emitter voltage:55V(min.);(2)current transfer ratio:50%(min.);(3)rank GB:100%(min.);(4)isolation voltage:4...
TLP633: DescriptionThe TLP633 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Features of the TLP633 are:(1)collector-emitte...
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The TLP633 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
Features of the TLP633 are:(1)collector-emitter voltage:55V(min.);(2)current transfer ratio:50%(min.);(3)rank GB:100%(min.);(4)isolation voltage:4000Vrms(min.).
The absolute maximum ratings of the TLP633 can be summarized as:(1)forward current:60mA;(2)peak forward current:40mA;(3)reverse voltage:5V;(4)collector-base voltage:80V;(5)collector current:50mA;(6)power dissipation:150mW;(7)storage temperature range:-55 to 150;(8)operating temperature range:-50 to 100.
If you want to know more information such as the electrical characteristics about the TLP633, please download the datasheet in www.seekic.com or www.chinaicmart.com .