TLP631

Series: -
Number of Channels: 1
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Current - DC Forward (If): 60mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Output Type: Transistor with Base
Voltage - Output: 55V
Mounting Type: Through Hole
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Manufacturer: Toshiba


Features:

• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.) Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file no. E67349


Pinout




Specifications

Parameter		Symbol	Rating	Unit
Collector to Base Voltage		VCBO	600	V
Collector to Emitter Voltage		VCEO	±20	V
Emitter to Base Voltage		VEBO	20	V
Collect Current	DC	IC	40	A
	1 ms	ICP	20	A
Emitter-collector forward current	DC	IF	40	mA
	1 ms	IFM	40
Collector power dissipation		PC	45	W
Junction Temperature		Tj	150
Storage Temperature Range		Tstg	-55 ~ +150

Description

The TOSHIBA TLP631 and TLP632 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.

TLP631 is no−base internal connection for high−EMI environments.