TLP628-4

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

The TOSHIBA TLP628, −2, and TLP628-4 consists of a gallium arsenide infrared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector−emitter breakdown voltage.

The TLP628−2 offers two isolated channels in a eight lead plastic DIP package, while the TLP628-4 provide four isolated channels per package.
• Collector−emitter voltage: 350 V (min.)
• Current transfer ratio: 50% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002, certificate no.7426
   BS EN60950-1:2002, certificate no.7427