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TLP572

Features: ·Collector-emitter voltage: 55 V (min)·Current transfer ratio: 1000% (min) ·Isolation voltage: 2500 Vrms (min) ·UL recognized: UL1577, file No. E67349PinoutSpecifications Characteristics Symbol Rating Unit LED Forward current IF 50 mA Forward current derating (Ta...

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TLP572: Features: ·Collector-emitter voltage: 55 V (min)·Current transfer ratio: 1000% (min) ·Isolation voltage: 2500 Vrms (min) ·UL recognized: UL1577, file No. E67349PinoutSpecifications Characterist...

TLP572 Data Sheet

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Part Number:
TLP572
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Collector-emitter voltage: 55 V (min)
·Current transfer ratio: 1000% (min)  
·Isolation voltage: 2500 Vrms (min)  
·UL recognized: UL1577, file No. E67349 
 


Pinout

Connection Diagram


Specifications

Characteristics Symbol Rating Unit
LED Forward current IF 50 mA
Forward current derating (Ta 53 ) IF/
 -0.7 mA/
Peak forward current (100 s pulse, 100 pps) IFP 1 A
Reverse voltage VR 5 V
Junction temperature Tj 125
Detector Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 0.3 V
Collector current IC 150/-10 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta 25 ) PC/
 -1.5 mW/
Junction temperature Tj 125
Storage temperature range Tstg -55 to 125
Operating temperature range Topr -30 to 85
Lead soldering temperature (10 s) Tsol 260
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta 25) PD/
 -2.6 mW/
Isolation voltage (AC, 1 min., R.H. 60%)
(Note)
BVS		 2500 Vrms



Description

The TOSHIBA TLP572 consists of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

TLP572 is no-base internal connection for high-EMI environments.




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