Features: Isolation Voltage : 2500 Vrms (Min)
Common Mode Transient Immunity
:±10kV/s (Min)
@VCM = 1500 V
Switching Time : tpHL , tpLH = 0.1s (Min)
= 0.8s (Max)
@IF = 10 mA , VCC = 15 V , RL = 20 k , Ta = 25°C
Switching Time Dispersion : 0.7s (Max)
(|tpLH−tpHL|)
TTL Compatible
UL Recognized : UL1577, File No. E67349
Application
|
Characteristic |
Symbol |
Rating |
Unit |
|
LED |
Forward Current (Note 1) |
IF |
25 |
mA |
| Pulse Forward Current (Note 2) |
IFP |
50 |
mA |
| Peak Transient Forward Current (Note 3) |
IFPT |
1 |
A |
| Reverse voltage |
VR |
3 |
V |
| Diode Power Dissipation (Note 4) |
PD |
45 |
mW |
|
Detector |
Output Current |
IO |
8 |
mA |
| Peak Output Current |
IOP |
16 |
mA |
| Output Voltage |
VO |
−0.5~20 |
V |
| Supply Voltage |
VCC |
−0.5~30 |
V |
| Output Power Dissipation (Note 5) |
PO |
100 |
mW |
| Operating temperature range |
Topr |
-40~85 |
°C |
| Storage temperature range |
Tstg |
-55~125 |
°C |
| Lead Solder Temperature(10s) (Note 6) |
Tsol |
260 |
°C |
| Isolation Voltage(AC,1min.,R.H.60%,Ta=25°C) (Note 7) |
BVS |
2500 |
Vrms |
(Note 1) Derate 0.5mA above 70°C.
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.0mA/°C above 70°C.
(Note 3) Pulse width PW1s,300pps.
(Note 4) Derate 0.9mW/°C above 70°C.
(Note 5) Derate 2mW/°C above 70°C.
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considerd a two terminal device : pins1,2,3 and 4 shorted together and pins5,6,7 and 8 shorted together.
Pinout
Specifications
|
Characteristic |
Symbol |
Rating |
Unit |
|
LED |
Forward Current (Note 1) |
IF |
25 |
mA |
| Pulse Forward Current (Note 2) |
IFP |
50 |
mA |
| Peak Transient Forward Current (Note 3) |
IFPT |
1 |
A |
| Reverse voltage |
VR |
3 |
V |
| Diode Power Dissipation (Note 4) |
PD |
45 |
mW |
|
Detector |
Output Current |
IO |
8 |
mA |
| Peak Output Current |
IOP |
16 |
mA |
| Output Voltage |
VO |
−0.5~20 |
V |
| Supply Voltage |
VCC |
−0.5~30 |
V |
| Output Power Dissipation (Note 5) |
PO |
100 |
mW |
| Operating temperature range |
Topr |
-40~85 |
°C |
| Storage temperature range |
Tstg |
-55~125 |
°C |
| Lead Solder Temperature(10s) (Note 6) |
Tsol |
260 |
°C |
| Isolation Voltage(AC,1min.,R.H.60%,Ta=25°C) (Note 7) |
BVS |
2500 |
Vrms |
(Note 1) Derate 0.5mA above 70°C.
(Note 2) 50% duty cycle,1ms pulse width.
Derate 1.0mA/°C above 70°C.
(Note 3) Pulse width PW1s,300pps.
(Note 4) Derate 0.9mW/°C above 70°C.
(Note 5) Derate 2mW/°C above 70°C.
(Note 6) Soldering portion of lead : up to 2mm from the body of the device.
(Note 7) Device considerd a two terminal device : pins1,2,3 and 4 shorted together and pins5,6,7 and 8 shorted together.
DescriptionThe TOSHIBA TLP559(IGM) consists of a GaAlAs high-output light emitting diode and a high speed detector of one chip photo diodetransistor.
This unit is 8-lead DIP package.
TLP559(IGM) has no internal base connection,and a Faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity.
TLP559(IGM) guarantees minimum and maximum of propagation delay time,switching time dispersion,and high common mode transient immunity.There for TLP559(IGM) is suitable for isolation interface between IPM(Intelligent Power Module) and control IC circuits in motor control application.
TLP559(IGM) Data Sheet
