TLP550

Series: -
Number of Channels: 1
Input Type: DC
Output Type: Transistor with Base
Current Transfer Ratio (Max): -
Mounting Type: Through Hole
Packaging: Tube
Current - Output / Channel: 8mA
Current - DC Forward (If): 25mA
Vce Saturation (Max): -
Package / Case: 8-DIP (0.300", 7.62mm)
Voltage - Isolation: 2500Vrms
Manufacturer: Toshiba
Voltage - Output: 15V
Current Transfer Ratio (Min): 10% @ 16mA


Features:

Isolation voltage: 2500 Vrms (min.)
Switching speed: t_pHL, t_pLH = 0.5s (typ.)(R_L=1.9 k)
TTL compatible
UL recognized: UL1577, file No. E67349

Pinout




Specifications

Characteristic		Symbol	Rating	Unit
LED	Forward current                                      (Note 1)	IF	25	mA
	Pulse forward current                             (Note 2)	IFP	50	mA
	Peak transient forward current               (Note 3)	IFPT	1	A
	Reverse voltage	VR	5	V
	Diode power dissipation                          (Note 4)	PD	45	mW
Detector	Output current	IO	8	mA
	Peak output current	IOP	16	mA
	Supply voltage	VCC	-0.5~15	V
	Output voltage	VO	-0.5~15	V
	Output power dissipation                          (Note 5)	PO	100	°C
Operating temperature range		Topr	-55~100	°C
Storage temperature range		Tstg	-55~125	°C
Lead solder temperature (10s)		Tsol	260	°C
Isolation voltage (AC, 1min., R.H. = 40~60%)           (Note 6)		BVS	2500	Vrms

(Note 1) Derate 0.8mA above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
              Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1s, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
(Note 6) Device considered two-terminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together.
(Note 7) Switching time test circuit.

Description

TLP550 constructs a high emitting diode and a one chip photo diodetransistor.

TLP550 has no base connection, and is suitable for application at noisy environmental condition.

This unit is 8−lead DIP package.