DescriptionThe TLP535 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Features of the TLP535 are:(1)collector-emitter voltage:55V(min.);(2)current transfer ratio:50%(min.);(3)rank GB:100%(min.);(4)isolation voltage:...
TLP535: DescriptionThe TLP535 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. Features of the TLP535 are:(1)collector-emitt...
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The TLP535 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.
Features of the TLP535 are:(1)collector-emitter voltage:55V(min.);(2)current transfer ratio:50%(min.);(3)rank GB:100%(min.);(4)isolation voltage:2500Vrms(min.).
The absolute maximum ratings of the TLP535 can be summarized as:(1)forward current:20mA;(2)pulse forward current:40mA;(3)reverse voltage:5V;(4)output voltage:7V;(5)output current:50mA;(6)diode power dissipation:40mW;(7)storage temperature range:-55 to 125;(8)operating temperature range:0 to 70.
If you want to know more information such as the electrical characteristics about the TLP535, please download the datasheet in www.seekic.com or www.chinaicmart.com .