TLP521-1GB

The TLP521-1GB is designed as one kind of GaAs Ired & photo-transistor that consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. This device also can offers two isolated channels in an eight lead plastic DIP package, while the TLP521-4 provides four isolated channels in a sixteen plastic DIP package.

Features of the TLP521-1GB are:(1)Collector-emitter voltage: 55 V (min); (2)Current transfer ratio: 50% (min) Rank GB: 100% (min); (3)Isolation voltage: 2500 Vrms (min); (4)UL recognized: made in Japan: UL1577, file No. E67349 and made in Thailand: UL1577, file No. E152349.

The absolute maximum ratings of the TLP521-1GB can be summarized as:(1)Forward current: 70 mA;(2)Forward current derating: -0.93 (Ta 50°C) mA /°C;(3)Pulse forward current: 1 (100 pulse, 100pps) A;(4)Reverse voltage: 5 V;(5)Junction temperature: 125 °C;(6)Collector-emitter voltage: 55 V;(7)Emitter-collector voltage: 7 V;(8)Collector current: 50 mA;(9)Collector power dissipation (1 circuit):150 mW;(10)Collector power dissipation derating (1 circuit Ta 25°C): -1.5 mW /°C;(11)Junction temperature: 125 °C;(12)Storage temperature range: -55 to 125 °C;(13)Operating temperature range: -55 to 100 °C;(14)Lead soldering temperature: 260 (10 s) °C;(15)Total package power dissipation: 250 mW;(16)Isolation voltage: 2500 (AC, 1min., R.H. 60%) Vrms. If you want to know more information about TLP521-1GB, please download the datasheet in www.seekic.com or www.chinaicmart.com .