TLP4222G-2

Features: Normally closed devicePeak off-state voltage: 350 V (min)Trigger LED current: 3 mA (max)On-state current: 100 mA (max)On-state resistance: 50 (max) Isolation voltage: 2500 Vrms (min)PinoutSpecifications Characteristic Symbol Rating Unit LED Forward current IF ...

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TLP4222G-2 Picture
SeekIC No. : 004521752 Detail

TLP4222G-2: Features: Normally closed devicePeak off-state voltage: 350 V (min)Trigger LED current: 3 mA (max)On-state current: 100 mA (max)On-state resistance: 50 (max) Isolation voltage: 2500 Vrms (min)Pinou...

floor Price/Ceiling Price

Part Number:
TLP4222G-2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

 Normally closed device
 Peak off-state voltage: 350 V (min)
 Trigger LED current: 3 mA (max)
 On-state current: 100 mA (max)
 On-state resistance: 50 (max)
Isolation voltage: 2500 Vrms (min)




Pinout

  Connection Diagram




Specifications

Characteristic
Symbol
Rating
Unit
LED
Forward current
IF
50
mA
Forward current derating (Ta 25°C)
IF / °C
-0.5
mA / °C
Peak forward current (100s pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Detector
Off-state output terminal voltage
VOFF
350
V
On-state current TLP4222G
ION
100
mA
TLP4222G-2 One channel operation
Two channel operations
On-state current derating (Ta 25°C) TLP4222G
ION/°C
-1.0
mA / °C
TLP4222G-2 One channel operation
Two channel operations
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55 to 125
°C
Operating temperature range
Topr
-40 to 85
°C
Lead soldering temperature (10s)
Tsol
260
°C
Isolation voltage(AC, 1 min., R.H. 60%) (Note1)
BVS
2500
Vrms


Note 1: For TLP4222G, Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together.
             For TLP4222G-2, Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7 and 8 are shorted together.




Description

The Toshiba TLP4222G-2 consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET and is the normally closed photorelay with 350-V withstanding voltage.




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