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TLP4176G

Features: • 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch• 1-form-B• Peak off-state voltage: 350 V (min)• Trigger LED current: 3 mA (max)• On-state current: 120 mA (max)• On-state resistance: 25 (max)• Isolation voltage: 1500 Vrms (min)PinoutSpecificat...

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TLP4176G: Features: • 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch• 1-form-B• Peak off-state voltage: 350 V (min)• Trigger LED current: 3 mA (max)• On-state current: 120 mA (...

TLP4176G Data Sheet

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Part Number:
TLP4176G
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch
• 1-form-B
• Peak off-state voltage: 350 V (min)
• Trigger LED current: 3 mA (max)
• On-state current: 120 mA (max)
• On-state resistance: 25 (max)
• Isolation voltage: 1500 Vrms (min)


Pinout

Connection Diagram


Specifications

Characteristics Symbol Rating Unit
LED Forward current IF 50 mA
LED Forward current derating
(Ta => 25)		 IF/ -0.5 mA/
LED Peak forward current
(100 s pulse, 100 pps)		 IFP 1 A
LED Reverse voltage VR 5 V
LED Junction temperature Tj 125
Detector Off-state output terminal voltage VOFF 350 V
Detector On-state current ION 120 mA
Detector On-state current derating
(Ta => 25)		 ION/ -1.2 mA/
Detector Junction temperature Tj 125
Operating temperature range Topr −40 to 85
Storage temperature range Tstg −55 to 125
Lead soldering temperature (10 s) Tsol 260
Isolation voltage
(AC, 1 min, R.H. <= 60%) (Note 1)		 BVS 1500 Vrms



Description

The TOSHIBA TLP4176GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly.

The TLP4176GA is suitable for the modem applications which require space savings.




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