TLP371

Series: -
Number of Channels: 1
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If): 60mA
Current Transfer Ratio (Max): -
Output Type: Darlington with Base
Mounting Type: Through Hole
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Current Transfer Ratio (Min): 1000% @ 1mA
Voltage - Output: 300V
Current - Output / Channel: 150mA
Vce Saturation (Max): 1.2V
Manufacturer: Toshiba


Features:

Current transfer ratio: 1000% (min) (I_F = 1mA)
Isolation voltage: 5000 Vrms (min)
 UL recognized: UL1577, file no. E67349

Pinout




Specifications

Characteristic		Symbol	Rating	Unit
LED	Forward current	IF	60	mA
	Forward current derating (Ta 39°C)	IF /°C	-0.7	mA /°C
	Peak forward current (100s pulse,100pps)	IFP	1	A
	Reverse voltage	VR	5	V
	Junction temperature	Tj	125	°C
Detector	Collector-emitter voltage	VCEO	300	V
	Collector-base voltage	VCBO	300	V
	Emitter-collector voltage	VECO	0.3	V
	Emitter-base voltage	VEBO	7	V
	Collector current	IC	150	mA
	Power dissipation	PC	300	mW
	Power dissipation derating (Ta 25°C)	PC /°C	-3.0	mW /°C
	Junction temperature	Tj	125	°C
Storage temperature range		Tstg	-55~125	°C
Operating temperature range		Topr	-55~100	°C
Lead soldering temperature (10s)		Tsol	260	°C
Total package power dissipation		PT	350	mW
Total package power dissipation derating (Ta25°C)		PT /°C	-3.5	mW /°C
Isolation voltage (AC, 1 min, R.H. 60%) (Note 1)		BVS	5000	Vrms

(Note 1)Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted together.

Description

The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected photo−transistor which has an integrated base−emitter resistor to optimize switching speed and elevated temperature characteristics in a six lead plastic DIP package.

TLP371 is no−base internal connection for high−EMI environments.