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TLP351F

Features: • Peak output current: ±0.6 A (max)• Guaranteed performance over temperature: −40 to 100°C• Supply current: 2 mA (max)• Power supply voltage: 10 to 30 V• Threshold input current : IF = 5 mA (max)• Switching time (tpLH/tpHL) : 700 ns (max)• ...

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SeekIC No. : 004521725 Detail

TLP351F: Features: • Peak output current: ±0.6 A (max)• Guaranteed performance over temperature: −40 to 100°C• Supply current: 2 mA (max)• Power supply voltage: 10 to 30 V•...

TLP351F Data Sheet

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Part Number:
TLP351F
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF = 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/s
• Isolation voltage: 3750 Vrms
• Construction mechanical rating


Pinout

Connection Diagram


Description

The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package.

TLP351F is suitable for gate driving circuit of IGBT or power MOSFET. Especially TLP351F is capable of "direct" gate drive of lower Power IGBTs.

Absolute maximum ratings and electrical characteristics are the same as TLP351F technical datasheet.




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