TLP351

Peak output current: ±0.6 A (max)
Guaranteed performance over temperature: −40 to 100°C
Supply current: 2 mA (max)
Power supply voltage: 10 to 30 V
Threshold input current : I_F = 5 mA (max)
Switching time (t_pLH/t_pHL) : 700 ns (max)
Common mode transient immunity: 10 kV/s
Isolation voltage: 3750 Vrms

Note 1: Pulse width P_W 1 s, 300 pps
Note 2: Exponential waveform pulse width P_W 10 s, f 15 kHz
Note 3: Exponential waveform I_OPH -0.4 A ( 2.0 s), I_OPL +0.4 A ( 2.0 s),Ta = 100°C
Note 4: It is 2 mm or more from a lead root.
Note 5: Device considerd a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together.
Note 6: A ceramic capacitor(0.1 F) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.

The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.

This unit is 8-lead DIP package.

TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP351 is capable of "direct" gate drive of lower Power IGBTs.