Features: `4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch `1-Form-A `Peak Off-State Voltage : 20 V (MIN.)` Trigger LED Current : 4 mA (MAX.) `On-State Current : 450 mA (MAX.) `On-State Resistance : 1.2(MAX.), 0.8(TYP.) `Output Capacitance : 12 pF (MAX.), 5 pF (TYP.) `Isolation Voltage : 1500 Vrms...
TLP3231: Features: `4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch `1-Form-A `Peak Off-State Voltage : 20 V (MIN.)` Trigger LED Current : 4 mA (MAX.) `On-State Current : 450 mA (MAX.) `On-State Resistance :...
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Features: · Peak Off-State Voltage : 400 V (min)· Trigger LED Current : 15 mA (max) (TLP3021(S)) 1...
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | ||
LED | Forward Current |
IF |
50 |
mA | |
Forward Current Derating (Ta25) |
IF/ |
-0.5 |
mA/ | ||
Reverse Voltage |
VR |
5 |
V | ||
Junction Temperature |
Tj |
125 |
|||
DETECTOR | Off-State Output Terminal Voltage |
VOFF |
20 |
V | |
On-State Current |
ION |
450 |
A | ||
On-State Current Derating (Ta25) |
ION/ |
-4.5 |
|||
Junction Temperature |
Tj |
125 |
|||
Storage Temperature Range |
Tstg |
-40~125 |
|||
Operating Temperature Range |
Topr |
-20~85 |
|||
Lead Soldering Temperature (10 s) |
Tsol |
260 |
|||
Isolation Voltage (AC, 1 minute, R.H.60%) (NOTE1) |
BVS |
1500 |
Vrms |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(NOTE 1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted together.
The TOSHIBA TLP3231 is a super small-outline photorelay, suitable for surface-mount assembly. The TLP3231 consists of a GaAs infrared-emitting diode optically coupled to a photo-MOS FET and housed in a 4-pin package.
TLP3231's characteristics also include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measuring instruments.