TLP3230

Features: • 4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch• 1-Form-A• Peak Off-State Voltage : 20 V (MIN.)• Trigger LED Current : 4 mA (MAX.)• On-State Current : 160 mA (MAX.)• On-State Resistance : 8(MAX.), 5(TYP.)• Output Capacitance : 2.5 pF (MAX.), 1....

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TLP3230 Picture
SeekIC No. : 004521712 Detail

TLP3230: Features: • 4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch• 1-Form-A• Peak Off-State Voltage : 20 V (MIN.)• Trigger LED Current : 4 mA (MAX.)• On-State Current : 160 m...

floor Price/Ceiling Price

Part Number:
TLP3230
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• 4 pin SSOP (SSOP4) : 1.8 mm high, 1.27 mm pitch
• 1-Form-A
• Peak Off-State Voltage : 20 V (MIN.)
• Trigger LED Current : 4 mA (MAX.)
• On-State Current : 160 mA (MAX.)
• On-State Resistance : 8(MAX.), 5(TYP.)
• Output Capacitance : 2.5 pF (MAX.), 1.0 pF (TYP.)
• Isolation Voltage : 1500 Vrms (MIN.)



Pinout

  Connection Diagram


Specifications

CHARACTERISTIC SYMBOL RATING UNIT
LED Forward Current IF 50 mA
Forward Current Derating (Ta25) IF / -0.5 mA/
Reverse Voltage VR 5 V
Junction Temperature Tj 125
DETECTOR Off-State Output Terminal Voltage VOFF 20 V
On-State Current ION 160 mA
On-State Current Derating (Ta25) ION/ -1.6 mA/
Junction Temperature Tj 125
Storage Temperature Range Tstg −40~125
Operating Temperature Range Topr −20~85
Lead Soldering Temperature (10s) Tsol 260
Isolation Voltage (AC,1min. , R.H.60%)(NOTE1) BVS 1500 Vrms

(NOTE1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted together.


Description

The TOSHIBA TLP3230 is a super small-outline photorelay, suitable for surface-mount assembly. The TLP3230 consists of a GaAs infrared-emitting diode optically coupled to a photo-MOS FET and housed in a 4-pin package.

TLP3230's characteristics also include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measuring instruments.




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