TLP251

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pulse width PW 1s, 300pps
Note 2: Expornential waveform
Note 3: Expornential waveform, IOPH −0.25A( 2.0s), IOPL +0.25A(2.0s)
Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together.
Note 5: A ceramic capacitor(0.1F)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear ampifier. Failure to provide the bypassing may impair the swiching property.The total lead length between capacitor and coupler should not exceed 1cm.

The TOSHIBA TLP251 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of "direct" gate drive of lower power IGBTs. (~15A)
`Input threshold current: IF=5mA(max.)
`Supply current (ICC): 11mA(max.)
`Supply voltage (VCC): 10−35V
`Output current (IO): ±0.4A(max.)
`Switching time (tpLH / tpHL): 1s(max.)
`Isolation voltage: 2500Vrms(min.)
`UL recognized: UL1577, file no.E67349
`Option(D4)
VDE Approved : DIN EN60747-5-2 Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage                                                                : 4000VPK