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TLP250F

DescriptionThe TLP250F consist of a GaAlAs light emitting diode and a integrated photodetector.It is suitable for gate dricing circuit of IGBT or power MOS FET. Features of the TLP250F are:(1)input threshold current:IF=5mA(max.);(2)supply current:11mA(max.);(3)supply voltage:10-35V;(4)output curr...

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SeekIC No. : 004521645 Detail

TLP250F: DescriptionThe TLP250F consist of a GaAlAs light emitting diode and a integrated photodetector.It is suitable for gate dricing circuit of IGBT or power MOS FET. Features of the TLP250F are:(1)input...

TLP250F Data Sheet

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Part Number:
TLP250F
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Description

The TLP250F consist of a GaAlAs light emitting diode and a integrated photodetector.It is suitable for gate dricing circuit of IGBT or power MOS FET.

Features of the TLP250F are:(1)input threshold current:IF=5mA(max.);(2)supply current:11mA(max.);(3)supply voltage:10-35V;(4)output current:±1.5A(max.);(5)switching time:tpHL,tpLH=0.5s(max.);(6)isolation voltage:2500Vrms(min.).

If you want to know more information such as the electrical characteristics about the TLP250F, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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