TLP250F

The TLP250F consist of a GaAlAs light emitting diode and a integrated photodetector.It is suitable for gate dricing circuit of IGBT or power MOS FET.

Features of the TLP250F are:(1)input threshold current:IF=5mA(max.);(2)supply current:11mA(max.);(3)supply voltage:10-35V;(4)output current:±1.5A(max.);(5)switching time:tpHL,tpLH=0.5s(max.);(6)isolation voltage:2500Vrms(min.).

If you want to know more information such as the electrical characteristics about the TLP250F, please download the datasheet in www.seekic.com or www.chinaicmart.com .