TLP227G−2

• TLP227G: 4 pin DIP(DIP4),1 channel type(1 form A)
• TLP227G−2: 8 pin DIP(DIP8),2 channel type(2 form A)
• Peak off−state voltage: 350V(min.)
• Trigger LED current: 3mA(max.)
• On−state current: 120mA(max.)
• On−state resistance: 35(max.)
• Isolation voltage: 2500Vrms (min.)
• Isolation thickness: 0.4mm(min.)
• BSI approved: BS EN60065: 2002, certificate no.8275 BS EN60950-1: 2002, certificate no.8276
• Option(D4) type UV approved: DIN EN 60747-5-2, certificate no. 40011913

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum atings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook "Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test eport and estimated failure rate, etc).
(Note 1): Two channels operating simultaneously.
(Note 2): Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted ogether.

The TOSHIBA TLP227G−2 series consist of a gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a plastic DIP package.

The TLP227G−2 series are a bi−directional switch which can replace mechanical relays in many applications.