TLP222G

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
Relay Type: Relay
Packaging: Tube
Mounting Type: Through Hole
Termination Style: PC Pin
Load Current: 120mA
Voltage - Load: 0 ~ 350 V
On-State Resistance: 50 Ohm
Voltage - Input: 1.15VDC
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-DIP
Manufacturer: Toshiba
Series: TLP222G


Features:

TLP222G: 4-pin DIP (DIP4), 1-channel type (1-form-A)
TLP222G-2: 8-pin DIP (DIP8), 2-channel type (2-form-A)
Peak Off-state voltage: 350 V (min)
Trigger LED current: 3 mA (max)
On-state current: 120 mA (max)
On-state resistance: 35 (max, t < 1 s)
On-state resistance: 50 (max, continuous)
 Isolation voltage: 2500 Vrms (min)

Pinout




Specifications

Characteristics				Symbol	Rating	Unit
LED	Forward current			IF	50	mA
	Forward current derating (Ta 25°C)			IF/°C	-0.5	mA/°C
	Peak Forward Current (100s pulse, 100 pps)			IFP	1	A
	Reverse voltage			VR	5	V
	Junction temperature			Tj	125	°C
Detector	Off-state output terminal voltage			VOFF	350	V
	On-state current	TLP222G		ION	120	mA
		TLP222G-2	One Channel
			Both Channel (Note 1)
	On-State Current Derating (Ta25°C)	TLP222G		ION/°C	-1.2	mA/°C
		TLP222G-2	One Channel
			Both Channel (Note 1)
	Junction temperature			Tj	125	°C
Storage temperature				Tstg	-55 to 125	°C
Operating temperature				Topr	-40 to 85	°C
Lead soldering temperature (10 s)				Tsol	260	°C
Isolation Voltage (AC, 1 minute, R.H. 60%) (Note 2)				BVS	2500	Vrms

Note 1: Two channels operating simultaneously.
Note 2: Device considered a two-terminal device: LED side pins shorted together and detector side pins shorted together.

Description

The Toshiba TLP222G series consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package.

The TLP222G series are a bi-directional switch, which can replace mechanical relays in many applications.