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TLP222A-2

Features: Normally open (1-form-A and 2-form-A) devices Peak off-state voltage: 60 V (min) Trigger LED current: 3 mA (max) On-state current: 500 mA (max) On-state resistance: 2 (max) Isolation voltage: 2500 Vrms (min) UL recognized: UL1557, File No.E67349PinoutSpecifications Characteristics ...

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TLP222A-2: Features: Normally open (1-form-A and 2-form-A) devices Peak off-state voltage: 60 V (min) Trigger LED current: 3 mA (max) On-state current: 500 mA (max) On-state resistance: 2 (max) Isolation volt...

TLP222A-2 Data Sheet

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Part Number:
TLP222A-2
Supply Ability:
5000

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Product Details

Description



Features:

 Normally open (1-form-A and 2-form-A) devices
Peak off-state voltage: 60 V (min)
Trigger LED current: 3 mA (max)
On-state current: 500 mA (max)
On-state resistance: 2 (max)
Isolation voltage: 2500 Vrms (min)
UL recognized: UL1557, File No.E67349




Pinout

Connection Diagram




Specifications

Characteristics
Symbol
Rating
Unit
LED
 Forward current
IF
50
mA
Forward current derating (Ta 25°C)
IF/°C
-0.5
mA/°C
Peak forward current
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Detector
 Off-state output terminal voltage
VOFF
60
V
On-state current TLP222A
ION
500
mA
TLP222A-2 One
channel
operation
Two
channel
operations
Forward
current
derating
(Ta 25°C)		 TLP222A
ION/°C
-5.0
mA/°C
TLP222A-2 One
channel
operation
Two
channel
operations
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to 125
°C
Operating temperature
Topr
-40 to 85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC, 1 min, R.H. 60%)
(Note 1)
BVS
2500
Vrms


Note 1: LED pins are shorted together. Detector pins are also shorted together.




Description

The Toshiba TLP222A and TLP222A-2 consist of a gallium arsenide infrared emitting diode optically coupled to a photo-MOSFET in a DIP package whose withstanding voltage is 60 V. The TLP222A-2 has higher output current rating than phototransistor-type photocoupler;hence, they are suitable for use as On/Off control for high current.




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