Features: GaN on SiC technology EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Non-diffused lens: excellent for coupling to light pipes and backlighting Luminous intensity ratio in one packaging unit IVmax/IVmi...
TLMB310: Features: GaN on SiC technology EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Non-diffused lens: excellent fo...
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Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse voltage |
VR |
5 |
V | |
DC forward current |
Tamb 60 |
IF |
20 |
mA |
Surge forward current |
tp 10 s |
IFSM |
0.1 |
A |
Power dissipation |
Tamb 60 |
PV |
100 |
mW |
Junction temperature |
Tj |
100 |
||
Operating temperature range |
Tamb |
40 to +100 |
||
Storage temperature range |
Tstg |
40 to +100 |
||
Soldering temperature |
t 5 s |
Tsd |
260 |
|
Thermal resistance junction/ambient |
mounted on PC board (pad size > 16 mm2) |
RthJA |
400 |
K/W |
This device has been redesigned in 1998 replacing SiC by GaN technology to meet the increasing demand for high efficiency blue LEDs.
The package of the TLMB310. is the PLCC2(equivalent to a size B tantalum capacitor).
The TLMB310 consists of a lead frame which is surrounded with a white thermoplast. All LEDs are categorized in luminous intensity groups. That allows users to assemble LEDs with uniform appearance.