TLE2074AIDWRG4

The TLE2074AIDWRG4 is one member of the TLE2074 series.The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process yields a typical noise floor of 11.6 nV/Hz, 17-nV/Hz ensured maximum, offering immediate improvement in noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing the dynamic signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.

Features of the TLE2074AIDWRG4 are:(1)on-chip offset voltage trimming for mproved DC performance; (2)wider supply rails increase dynamic signal range to ±19 V; (3)direct upgrades to TL05x, TL07x, and TL08x BiFET operational amplifiers; (4)greater than 2* bandwidth (10 MHz) and 3* slew rate (45 V/s) than TL07x; (5)ensured maximum noise floor 17 nV/Hz.BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers.This makes them better suited for interfacing with high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.

The absolute maximum ratings of the TLE2074AIDWRG4 can be summarized as:(1)supply voltage:19V;(2)storage temperature range:-65 to 150;(3)lead temperature:+260;(4)operating free-air temperature range:-40 to 85;(5)input current:±1 mA.ot only does this measurement require a picoammeter but test socket leakages can easily exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with no device in the socket. The device is then inserted in the socket and a second test is performed that measures both the socket leakage and the device input bias current. The two measurements are then subtracted algebraically to determine the bias current of the device.