Features: • Untinted non diffused lens• Utilizing ultrabright AllnGaP (AS) and InGaN technology• High luminous intensity• High operating tempreature: Tj (chip junction tem-perature) up to 125 °C for AllnGaP devices• Luminous intensity and color categorized for each pa...
TLCB5100: Features: • Untinted non diffused lens• Utilizing ultrabright AllnGaP (AS) and InGaN technology• High luminous intensity• High operating tempreature: Tj (chip junction tem-pe...
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Parameter | Test condition | Symbol | Value | Unit |
Reverse voltage | VR | 5 | V | |
DC Forward current | Tamb 85 °C | IF | 50 | mA |
Surge forward current | tp 10 µs | IFSM | 1 | A |
Power dissipation | Tamb 85 °C | PV | 135 | mW |
Junction temperature | Tj | 125 | °C | |
Operating temperature range | Tamb | - 40 to + 100 | °C | |
Storage temperature range | Tstg | - 40 to + 100 | °C | |
Soldering temperature | t 5 s, 2 mm from body | Tsd | 260 | °C |
Thermal resistance junction/ ambient |
RthJA | 300 | K/W |