TLBE1100B

Features:

• Surface-mount devices
• 3.2 (L) * 2.8 (W) * 1.9 (H) mm
• Flat-top type
• InGaN LEDs
• High luminous intensity
• Low drive current, high-intensity light emission
• Colors: Blue d=470nm(typ)
Bluish Green d=505nm(typ)
Green d=528nm(typ)
• Pb free reflow soldering is possible




Application

• automotive use, message signboards, backlighting etc.
• Standard embossed tape packing: T11 (2000/reel)
8-mm tape reel




Specifications

Product Name	Forward Current IF (mA) Please see Note 1	Reverse Voltage VR(V)	Power Dissipation PD(mW)	Operating Temperature Topr()	Storage Temperature Tstg()
TLBE1100B	30	4	129	-40~100	-40~100
TLGTE1100B			135
TLEGE1100B			132

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Forward current derating

Opto-Electrical Characteristics (Ta=25°C) Characteristics Symbol Test Condition Min Typ Max Unit Forward Voltage V_F IF=20mA - 3.20
4.30
V Reverse Current I_R VR=4V - - 10
A Luminous Intensity I_V IF=20mA 63
100
- mcd Viewing Angle 2q1/2 - - 120° - deg Peak Wavelength lpeak IF=20mA - 468
- nm Dominant Wavelength lD IF=20mA - 465
- nm Spectral Line Half-Width Dl1/2 IF=20mA - 26
- nm