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TK70D06J1

Features: • High-Speed switching• Small gate charge: Qg = 87nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)• High forward transfer admittance: |Yfs| = 80S• Low leakage current: IDSS = 10 A (max) (VDS = 60 V)• Enhancement-mode: Vth = 1.1~2.3 V ...

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TK70D06J1: Features: • High-Speed switching• Small gate charge: Qg = 87nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)• High forward transfer admittance: |Yfs| = 80S&...

TK70D06J1 Data Sheet

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Part Number:
TK70D06J1
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High-Speed switching
• Small gate charge: Qg = 87nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)
• High forward transfer admittance: |Yfs| = 80S
• Low leakage current: IDSS = 10 A (max) (VDS = 60 V)
• Enhancement-mode: Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol
Rating
Units
Drain-to-Source Voltage VDSS
60
V
Drain-gate voltage (RGS = 20 k) VDGR
60
V
Gate-source voltage VGSS
±20
V
Drain Current                 DC (Note 1) ID
70
A
Pulse (Note 1) IDP
280
Drain power dissipation (Tc = 25°C) PD
140
W
Single pulse avalanche energy (Note 2) EAS
751
mJ
Avalanche current IAR
70
A
Repetitive avalanche energy (Note 3) EAR
10.3
mJ
Channel temperature Tch
150
Storage temperature range Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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