Position: Home  > All Categories> Integrated Circuits (ICs) > TK70D06J1

TK70D06J1

Features: • High-Speed switching• Small gate charge: Qg = 87nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)• High forward transfer admittance: |Yfs| = 80S• Low leakage current: IDSS = 10 A (max) (VDS = 60 V)• Enhancement-mode: Vth = 1.1~2.3 V ...

product image

TK70D06J1 Picture
See larger image
SeekIC No. : 004519869 Detail

TK70D06J1: Features: • High-Speed switching• Small gate charge: Qg = 87nC (typ.)• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)• High forward transfer admittance: |Yfs| = 80S&...

TK70D06J1 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TK70D06J1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• High-Speed switching
• Small gate charge: Qg = 87nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.)
• High forward transfer admittance: |Yfs| = 80S
• Low leakage current: IDSS = 10 A (max) (VDS = 60 V)
• Enhancement-mode: Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol
Rating
Units
Drain-to-Source Voltage VDSS
60
V
Drain-gate voltage (RGS = 20 k) VDGR
60
V
Gate-source voltage VGSS
±20
V
Drain Current                 DC (Note 1) ID
70
A
Pulse (Note 1) IDP
280
Drain power dissipation (Tc = 25°C) PD
140
W
Single pulse avalanche energy (Note 2) EAS
751
mJ
Avalanche current IAR
70
A
Repetitive avalanche energy (Note 3) EAR
10.3
mJ
Channel temperature Tch
150
Storage temperature range Tstg
−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum Ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Memory Cards, Modules
WT32
VTL5C7
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Isolators
HCPL062N
HCPL316J
Optoelectronics
SFH7770
TLP423J
View more