MOSFET MOSFET N-Ch 60V 70A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 70 A | ||
Resistance Drain-Source RDS (on) : | 0.0064 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 SIS | Packaging : | Tube |
Technical/Catalog Information | TK70A06J1(Q) |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 70A |
Rds On (Max) @ Id, Vgs | 6.4 mOhm @ 35A, 10V |
Input Capacitance (Ciss) @ Vds | 5450pF @ 10V |
Power - Max | 45W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 87nC @ 10V |
Package / Case | 2-10U1B |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TK70A06J1 Q TK70A06J1Q |