TK3A60DA(Q,M)

MOSFET N-CH 600V 2.5A TO-220SIS

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SeekIC No. : 003434052 Detail

TK3A60DA(Q,M): MOSFET N-CH 600V 2.5A TO-220SIS

floor Price/Ceiling Price

US $ .28~.73 / Piece | Get Latest Price
Part Number:
TK3A60DA(Q,M)
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $.73
  • $.65
  • $.58
  • $.51
  • $.45
  • $.4
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  • $.29
  • $.28
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/1/12

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 600V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2.5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) @ Vgs: 9nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 380pF @ 25V
Power - Max: 30W Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220SIS    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 9nC @ 10V
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 2.5A
Power - Max: 30W
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) @ Vds: 380pF @ 25V
Manufacturer: Toshiba
Supplier Device Package: TO-220SIS
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA


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