TK19H50C

Features: ·Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.)·High forward transfer admittance : |Yfs| = 14 S (typ.)·Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)·Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic Symbol...

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SeekIC No. : 004519790 Detail

TK19H50C: Features: ·Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.)·High forward transfer admittance : |Yfs| = 14 S (typ.)·Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)·...

floor Price/Ceiling Price

Part Number:
TK19H50C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

·Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.)
·High forward transfer admittance : |Yfs| = 14 S (typ.)
·Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
·Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristic Symbol Rating Unit
Drain−source voltage VDSS 500 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate−source voltage VGSS ±30 V
Drain current DC (Note 1) ID 19 A
Pulse (Note 1) IDP 76 A
Drain power dissipation (Tc = 25°C) PD 150 W
Single-pulse avalanche energy (Note 2) EAS 968 mJ
Avalanche current IAR 19 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C



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