Features: ·Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.)·High forward transfer admittance : |Yfs| = 14 S (typ.)·Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)·Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic Symbol...
TK19H50C: Features: ·Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.)·High forward transfer admittance : |Yfs| = 14 S (typ.)·Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)·...
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Characteristic | Symbol | Rating | Unit | |
Drain−source voltage | VDSS | 500 | V | |
Drain−gate voltage (RGS = 20 kΩ) | VDGR | 500 | V | |
Gate−source voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 19 | A |
Pulse (Note 1) | IDP | 76 | A | |
Drain power dissipation (Tc = 25°C) | PD | 150 | W | |
Single-pulse avalanche energy (Note 2) | EAS | 968 | mJ | |
Avalanche current | IAR | 19 | A | |
Repetitive avalanche energy (Note 3) | EAR | 15 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | −55~150 | °C |